GaN RF Power Devices to Represent Nearly 25% of High-Power Semiconductors for Mobile Wireless Infrastructure in 2017

SCOTTSDALE, Ariz., March 20, 2017 /PRNewswire/ — Gallium Nitride (GaN) RF power semiconductor devices gained meaningful market share over the last two years, despite a lackluster 2016, with 2017 promising to take things a bit further. ABI Research forecasts GAN RF power devices will…

Source: http://www.prnewswire.com/news-releases/gan-rf-power-devices-to-represent-nearly-25-of-high-power-semiconductors-for-mobile-wireless-infrastructure-in-2017-300426231.html